BD788

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Maximum DC Collector Current : 4 A
Collector- Emitter Voltage VCEO Max : 60 V
Maximum Operating Frequency : 50 MHz (Min)
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40
Package / Case : TO-225


Application

* Low CollectorEmitter Sustaining Voltage -V_CEO(sus)60 Vdc (Min) - BD787, BD788
* High CurrentGain - Bandwidth Product -f  = 50 MHz (Min) @ I  = 100 mAdcT C
* CollectorEmitter Saturation Voltage Specified at 0.5, 1.0, 2.0 and 4.0 Adc


Specifications

Rating	Symbol	BD787 BD788	Units
CollectorEmitter Voltage	VCEO	60	Vdc
CollectorBase Voltage	VCBO	80	Vdc
Emitter-Base Voltage	VEBO	6.0	Vdc
Collector Current	IC	4.0 8.0	Adc
Base Current	IB	1.0	Adc
Total Device Dissipation@ T = 25 ADerate above 25	PD	15 0.12	Watt mW/
Operating and Storage Junction Temperarture Range	TJ:TSTG	65 to +150

Parameters:

Technical/Catalog Information	BD788
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	4A
Power - Max	15W
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 200mA, 3V
Vce Saturation (Max) @ Ib, Ic	400mV @ 50mA, 500mA
Frequency - Transition	50MHz
Current - Collector Cutoff (Max)	100A
Mounting Type	Through Hole
Package / Case	TO-225-3
Packaging	Bulk
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BD788 BD788