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BD746C

Transistors Bipolar (BJT) 115W PNP Silicon

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SeekIC No. : 00214536 Detail

BD746C: Transistors Bipolar (BJT) 115W PNP Silicon

BD746C Data Sheet

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Part Number:
BD746C
Mfg:
Bourns
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/27

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 20 A
DC Collector/Base Gain hfe Min : 40 Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-93    

Description

Configuration :
Maximum Operating Frequency :
Packaging :
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
DC Collector/Base Gain hfe Min : 40
Package / Case : SOT-93
Maximum DC Collector Current : 20 A


Specifications

RATING SYMBOL VALUE UNIT
Collector-base voltage (IE = 0)

 BD746
BD746A
BD746B
BD746C		 VCBO

-50
-70
-90
-110

 V
Collector-emitter voltage (IB = 0)
 BD746
BD746A
BD746B
BD746C		 VCEO

-45
-60
-80
-100

 V
Emitter-base voltage VEBO

-5

 V
Continuous collector current IC

-20

 A
Peak collector current (see Note 1) ICM

-25

 A
Continuous base current IB

-7

 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot

115

 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot

3.5

 W
Unclamped inductive load energy (see Note 4) 1/2LIC2

90

 mJ
Operating free air temperature range TA -65 to +150 °C
Operating junction temperature range Tj -65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds TL 260 °C





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