BD746B

Transistors Bipolar (BJT) 115W PNP Silicon

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SeekIC No. : 00213468 Detail

BD746B: Transistors Bipolar (BJT) 115W PNP Silicon

floor Price/Ceiling Price

Part Number:
BD746B
Mfg:
Bourns
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 80 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 20 A
DC Collector/Base Gain hfe Min : 40 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-93    

Description

Maximum Operating Frequency :
Packaging :
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : 5 V
Collector- Emitter Voltage VCEO Max : 80 V
DC Collector/Base Gain hfe Min : 40
Package / Case : SOT-93
Maximum DC Collector Current : 20 A


Specifications

RATING SYMBOL VALUE UNIT
Collector-base voltage (IE = 0)

BD746
BD746A
BD746B
BD746C
VCBO

-50
-70
-90
-110

V
Collector-emitter voltage (IB = 0)
BD746
BD746A
BD746B
BD746C
VCEO

-45
-60
-80
-100

V
Emitter-base voltage VEBO

-5

V
Continuous collector current IC

-20

A
Peak collector current (see Note 1) ICM

-25

A
Continuous base current IB

-7

A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot

115

W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot

3.5

W
Unclamped inductive load energy (see Note 4) 1/2LIC2

90

mJ
Operating free air temperature range TA -65 to +150 °C
Operating junction temperature range Tj -65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds TL 260 °C





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