Transistors Bipolar (BJT) 115W NPN Silicon
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 45 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 20 A |
DC Collector/Base Gain hfe Min : | 40 | Configuration : | Single |
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT |
Package / Case : | SOT-93 |
RATING | SYMBOL | VALUE | UNIT | |
Collector-base voltage (IE = 0) |
BD745 BD745A BD745B BD745C |
VCBO |
50 |
V |
Collector-emitter voltage (IB = 0) |
BD745 BD745A BD745B BD745C |
VCEO |
45 |
V |
Emitter-base voltage | VEBO | 5 | V | |
Continuous collector current | IC | 20 | A | |
Peak collector current (see Note 1) | ICM | 25 | A | |
Continuous base current | IB | 7 | A | |
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) | Ptot | 115 | W | |
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) | Ptot | 3.5 | W | |
Unclamped inductive load energy (see Note 4) | 1/2LIC2 | 90 | mJ | |
Operating free air temperature range | TA | -65 to +150 | °C | |
Operating junction temperature range | Tj | -65 to +150 | °C | |
Storage temperature range | Tstg | -65 to +150 | °C | |
Lead temperature 3.2 mm from case for 10 seconds | TL | 260 | °C |