BD708

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 12 A
Packaging : Tube
DC Collector/Base Gain hfe Min : 40
Package / Case : TO-220
Maximum Operating Frequency : 3 MHz (Min)


Application

*LINEARAND SWITCHING INDUSTRIAL
*EQUIPMENT




Specifications

Symbol	Parameter	Value			Unit
		BD707	BD709	BD711
		BD708		BD712
VCBO	Collector-Base Voltage (IE =0)	60	80	100	V
VCER	Collector-Emitter Voltage (VBE =0)	60	80	100	V
VCEO	Collector-Emitter Voltage (IB =0)	60	80	100	V
VEBO	Emitter-Base Voltage (IC =0)	5			V
IC	Collector Current	12			A
ICM	Collector Peak Current	18			A
IB	Base Current	5			A
Ptot	Total Dissipation at Tc 25	75			W
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

Description

The BD707, BD709 and BD711 are silicon Epitaxial-Base NPN power transistors in Jedec TO-220 plastic package. They are intented for usein powerlinearand switchingapplications.


The BD707 and BD711 complementary PNP typesareBD708and BD712respectively.