BD676

Transistor Polarity : PNP
Mounting Style : Through Hole
Packaging : Bulk
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 4 A
Maximum Collector Cut-off Current : 200 uA
Power Dissipation : 40 W
Maximum Operating Temperature : + 150 C
Package / Case : TO-225
Collector- Emitter Voltage VCEO Max : 45 V
Collector- Base Voltage VCBO : 45 V


Application

* High DC Current Gain -h_FE= 750 (Min) @ I_C= 1.5 and 2.0 Adc
* Monolithic Construction
* BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A,677, 677A, 679, 679A, 681
* BD 678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703




Specifications

Rating	Symbol	BD676 BD676A	Units
CollectorEmitter Voltage	VCEO	45	Vdc
CollectorBase Voltage	VCB	45	Vdc
Emitter-Base Voltage	VEB	5.0	Vdc
Collector Current	IC	4.0	Adc
Base Current	IB	0.1	Adc
Total Device Dissipation@ T = 25 ADerate above 25	PD	40 0.32	Watt W/
Operating and Storage Junction Temperarture Range	TJ:TSTG	55 to +150

Parameters:

Technical/Catalog Information	BD676
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP - Darlington
Voltage - Collector Emitter Breakdown (Max)	45V
Current - Collector (Ic) (Max)	4A
Power - Max	40W
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 1.5A, 3V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 30mA, 1.5A
Frequency - Transition	-
Current - Collector Cutoff (Max)	500A
Mounting Type	Through Hole
Package / Case	TO-225-3
Packaging	Bulk
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BD676 BD676