Transistors Bipolar (BJT) 70W PNP Silicon
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 100 V | ||
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 8 A | ||
DC Collector/Base Gain hfe Min : | 60 | Maximum Operating Temperature : | + 150 C | ||
Mounting Style : | Through Hole | Package / Case : | TO-220 |
SYMBOL | PARAMETER | CONDITIONS | VALUE | UNIT |
VCBO | Collector-base voltage | Open emitter | 250 | V |
VCEO | Collector-emitter voltage | Open base | 200 | V |
VEBO | Emitter-base voltage | Open collector | 7 | V |
IC | Collector current | 8 | A | |
ICM | Collector current-peak | 16 | A | |
IB | Base current | 3 | A | |
IBM | Base currentt-peak | 6 | A | |
PT | Total power dissipation | TC=25 | 30 | W |
Tj | Junction temperature | 150 | ||
Tstg | Storage temperature | -55~150 |
The BD544C features are as follows:
`70 W at 25 Case Temperature
`Complement to Type BD543/A/B/C
`8 A Continuous Collector Current