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BD543B

Transistors Bipolar (BJT) 70W NPN Silicon

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SeekIC No. : 00213662 Detail

BD543B: Transistors Bipolar (BJT) 70W NPN Silicon

BD543B Data Sheet

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Part Number:
BD543B
Mfg:
Bourns
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 80 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 8 A
DC Collector/Base Gain hfe Min : 60 Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220    

Description

Configuration :
Maximum Operating Frequency :
Packaging :
Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 8 A
Collector- Emitter Voltage VCEO Max : 80 V
DC Collector/Base Gain hfe Min : 60
Package / Case : TO-220


Specifications

Parameter Symbol
Value
Units
Collector-Base Voltage BD543
BD543A
BD543B
BD543C		 VCBO
40
60
80
100
V
Collector-Emitter Voltage BD543
BD543A
BD543B
BD543C		 VCEO
40
60
80
100
V
Emitter-Base Voltage VEBO
5
V
Continuous collector current IC
8
A
Peak collector current (see Note 1) ICM
10
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot

70

W

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot

2

W

Operating free air temperature range TA
-65 to +150
Operating junction temperature range Tj
-65 to +150
Storage Temperature TSTG
-65 to +150
Lead temperature 3.2 mm from case for 10 seconds TL

260





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