Transistors Bipolar (BJT) 45W PNP Silicon
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 100 V | ||
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 5 A | ||
DC Collector/Base Gain hfe Min : | 40 | Maximum Operating Temperature : | + 150 C | ||
Mounting Style : | Through Hole | Package / Case : | TO-220 |
Parameter | Symbol |
Value |
Units |
Collector-base voltage (IE = 0) BD540 BD540A BD540B BD540C |
VCBO |
-40 -60 -80 -100 -40 |
V |
Collector-emitter voltage (IB = 0) BD540 BD540A BD540B BD540C |
VCEO |
-40 -60 -80 -100 -40 |
V |
Emitter-Base Voltage | VEBO |
-5 |
V |
Continuous collector current | IC |
-5 |
A |
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) | Ptot |
45 |
W |
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) | Ptot |
2 |
W |
Operating free air temperature range | TA |
-65 to +150 |
|
Operating junction temperature range | Tj |
-65 to +150 |
|
Storage Temperature | TSTG |
-65 to +150 |
|
Lead temperature 3.2 mm from case for 10 seconds | TL |
260 |