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BD539A

Transistors Bipolar (BJT) 45W NPN Silicon

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SeekIC No. : 00213488 Detail

BD539A: Transistors Bipolar (BJT) 45W NPN Silicon

BD539A Data Sheet

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Part Number:
BD539A
Mfg:
Bourns
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 5 A
DC Collector/Base Gain hfe Min : 40 Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220    

Description

Configuration :
Maximum Operating Frequency :
Packaging :
Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 5 A
DC Collector/Base Gain hfe Min : 40
Package / Case : TO-220


Specifications

Symbol Parameter
Value
Units
VCBO Collector-Base Voltage BD539
BD539A
BD539B
BD539C
BD539D
40
60
80
100
120
V
V
V
V
V
VCEO Collector-Emitter Voltage BD539
BD539A
BD539B
BD539C
BD539D
40
60
80
100
120
V
V
V
V
V
VEBO Emitter-Base Voltage
5
V
IC Collector Current (DC)
5
A
Ptot Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
45
W
Ptot Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

2

W

TA Operating free air temperature range
-65 to +150
Tj Operating junction temperature range
-65 to +150
TSTG Storage Temperature
-65 to +150
TL Lead temperature 3.2 mm from case for 10 seconds

260



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