Transistors Bipolar (BJT) 45W NPN Silicon
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 40 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 5 A |
DC Collector/Base Gain hfe Min : | 40 | Configuration : | Single |
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole |
Package / Case : | TO-220 |
Symbol | Parameter |
Value |
Units |
VCBO | Collector-Base Voltage BD539 BD539A BD539B BD539C BD539D |
40 60 80 100 120 |
V
V
V V V |
VCEO | Collector-Emitter Voltage BD539 BD539A BD539B BD539C BD539D |
40 60 80 100 120 |
V
V
V V V |
VEBO | Emitter-Base Voltage |
5 |
V |
IC | Collector Current (DC) |
5 |
A |
Ptot | Continuous device dissipation at (or below) 25°C case temperature (see Note 2) |
45 |
W |
Ptot | Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) |
2 |
W |
TA | Operating free air temperature range |
-65 to +150 |
|
Tj | Operating junction temperature range |
-65 to +150 |
|
TSTG | Storage Temperature |
-65 to +150 |
|
TL | Lead temperature 3.2 mm from case for 10 seconds |
260 |