BD537

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-220AB
Packaging : Tube
Maximum DC Collector Current : 8 A
Collector- Emitter Voltage VCEO Max : 80 V
DC Collector/Base Gain hfe Min : 15
Maximum Operating Frequency : 12 MHz


Application

* Low Saturation Voltage
* Complement to BD534, BD536 and BD538 respectively




Specifications

Symbol	Parameter	Value	Units
VCBO	Collector-Base Voltage : BD533 : BD535 : BD537	45 60 80	V V V
VCES	Collector-Emitter Voltage: BD533 : BD535 : BD537	45 60 80	V V V
VCEO	Collector-Emitter Voltage: BD533 : BD535 : BD537	45 60 80	V V V
VEBO	Emitter-Base Voltage	5	V
IC	Collector Current (DC)	8	A
IB	Base Current	1	A
PC	Collector Dissipation (TC =25)	50	W
TJ	Junction Temperature	150
TSTG	Storage Temperature	- 65 ~ 150

Parameters:

Technical/Catalog Information	BD537
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	8A
Power - Max	50W
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	800mV @ 200mA, 2A
Frequency - Transition	-
Current - Collector Cutoff (Max)	100A
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BD537 BD537 497 7174 5 ND 49771745ND 497-7174-5