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BD442S

Transistors Bipolar (BJT) PNP Epitaxial Sil

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SeekIC No. : 00210013 Detail

BD442S: Transistors Bipolar (BJT) PNP Epitaxial Sil

BD442S Data Sheet

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Part Number:
BD442S
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 80 V
Emitter- Base Voltage VEBO : - 5 V Maximum DC Collector Current : 4 A
DC Collector/Base Gain hfe Min : 40 Configuration : Single
Maximum Operating Frequency : 3 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-126
Packaging : Bulk    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
Maximum DC Collector Current : 4 A
Collector- Emitter Voltage VCEO Max : 80 V
Maximum Operating Frequency : 3 MHz
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40
Package / Case : TO-126


Parameters:

Technical/Catalog InformationBD442S
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)80V
Current - Collector (Ic) (Max)4A
Power - Max36W
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic800mV @ 200mA, 2A
Frequency - Transition3MHz
Current - Collector Cutoff (Max)100A
Mounting TypeThrough Hole
Package / CaseTO-126
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BD442S
BD442S



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