BD435G

Transistors Bipolar (BJT) BIP NPN 4A 22V

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SeekIC No. : 00207901 Detail

BD435G: Transistors Bipolar (BJT) BIP NPN 4A 22V

floor Price/Ceiling Price

US $ .19~.38 / Piece | Get Latest Price
Part Number:
BD435G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.38
  • $.29
  • $.26
  • $.19
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/9/26

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 32 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 4 A
DC Collector/Base Gain hfe Min : 40 Configuration : Single
Maximum Operating Frequency : 3 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-225
Packaging : Box    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Maximum DC Collector Current : 4 A
Emitter- Base Voltage VEBO : 5 V
Packaging : Box
DC Collector/Base Gain hfe Min : 40
Maximum Operating Frequency : 3 MHz (Min)
Package / Case : TO-225
Collector- Emitter Voltage VCEO Max : 32 V


Parameters:

Technical/Catalog InformationBD435G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)32V
Current - Collector (Ic) (Max)4A
Power - Max36W
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 2A
Frequency - Transition3MHz
Current - Collector Cutoff (Max)100A
Mounting TypeThrough Hole
Package / CaseTO-225-3
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BD435G
BD435G



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