Application·Designed for high power amplifiersSpecifications SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V IC Collector current ...
BD317: Application·Designed for high power amplifiersSpecifications SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage...
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SYMBOL | PARAMETER | CONDITIONS | VALUE | UNIT |
VCBO | Collector-base voltage | Open emitter | 100 | V |
VCEO | Collector-emitter voltage | Open base | 100 | V |
VEBO | Emitter-base voltage | Open collector | 7 | V |
IC | Collector current | 16 | A | |
ICM | Collector current(peak) | 20 | A | |
IB | Base current | 5 | A | |
PD | Total power dissipation | TC=25 | 200 | W |
Tj | Junction temperature | -65~200 | ||
Tstg | Storage temperature | -65~200 |
The BD317 features are as follows:
·With TO-3 package
·High DC current gain
·Excellent safe operating area
·Complement to type BD318