BD249C

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
DC Collector/Base Gain hfe Min : 25
Packaging : Tube
Maximum DC Collector Current : 25 A
Maximum Operating Frequency : 3 MHz (Min)
Package / Case : SOT-93


Specifications

RATING		SYMBOL	VALUE	UNIT
Collector-emitter voltage (RBE = 100 )	BD249 BD249A BD249B BD249C	VCER	55 70 90 115	V
Collector-emitter voltage (IC = 30)	BD249 BD249A BD249B BD249C	VCEO	45 60 80 100	V
Emitter-base voltage		VEBO	5	V
Continuous collector current		IC	25	A
Peak collector current (see Note 1)		ICM	40	A
Continuous base current		IB	5	A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)		Ptot	125	W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)		Ptot	3	W
Unclamped inductive load energy (see Note 4)		1/2LIC2	90	mJ
Operating junction temperature range		Tj	-65 to +150	°C
Storage temperature range		Tstg	-65 to +150	°C
Lead temperature 3.2 mm from case for 10 seconds		TL	250	°C