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BD246B

Transistors Bipolar (BJT) 80W PNP Silicon

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SeekIC No. : 00214402 Detail

BD246B: Transistors Bipolar (BJT) 80W PNP Silicon

BD246B Data Sheet

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Part Number:
BD246B
Mfg:
Bourns
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/27

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 80 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 10 A
DC Collector/Base Gain hfe Min : 40 Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-93    

Description

Configuration :
Maximum Operating Frequency :
Packaging :
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : 5 V
Collector- Emitter Voltage VCEO Max : 80 V
DC Collector/Base Gain hfe Min : 40
Maximum DC Collector Current : 10 A
Package / Case : SOT-93


Specifications

SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base Voltage BD246 Open emitter -55 V
BD246A -70
BD246B -90
BD246C -115
VCBO Collector-emitter Voltage BD246 Open base -45 V
BD246A -60
BD246B -80
BD246C -100
VEBO Emitter-Base Voltage Open collector -5 V
IC Collector current -25 A
ICM Collector current-peak -40 A
PC Total power dissipation TC=25 -5 W
TJ Junction Temperature 125
Tstg Storage Temperature Range -65~150





Description

The BD246B features are as follows:

·With TO-3PN package
·Complement to type BD249/A/B/C
·125 W at 25°C case temperature
·25 A continuous collector current




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