Transistors Bipolar (BJT) 80W PNP Silicon
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 60 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 10 A |
DC Collector/Base Gain hfe Min : | 40 | Configuration : | Single |
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT |
Package / Case : | SOT-93 |
SYMBOL | PARAMETER | CONDITIONS | VALUE | UNIT | |
VCBO | Collector-base Voltage | BD246 | Open emitter | -55 | V |
BD246A | -70 | ||||
BD246B | -90 | ||||
BD246C | -115 | ||||
VCBO | Collector-emitter Voltage | BD246 | Open base | -45 | V |
BD246A | -60 | ||||
BD246B | -80 | ||||
BD246C | -100 | ||||
VEBO | Emitter-Base Voltage | Open collector | -5 | V | |
IC | Collector current | -25 | A | ||
ICM | Collector current-peak | -40 | A | ||
PC | Total power dissipation | TC=25 | -5 | W | |
TJ | Junction Temperature | 125 | |||
Tstg | Storage Temperature Range | -65~150 |
The BD246A features are as follow:
·With TO-3PN package
·Complement to type BD249/A/B/C
·125 W at 25°C case temperature
·25 A continuous collector current