Transistors Bipolar (BJT) 80W NPN Silicon
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 100 V | ||
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 10 A | ||
DC Collector/Base Gain hfe Min : | 40 | Maximum Operating Temperature : | + 150 C | ||
Mounting Style : | SMD/SMT | Package / Case : | SOT-93 |
RATING | SYMBOL | VALUE | UNIT | |
Collector-emitter voltage (RBE = 100 ) |
BD245 BD245A BD245B BD245C |
VCER | 55 70 90 115 |
V |
Collector-emitter voltage (IC = 30mA) |
BD245 BD245A BD245B BD245C |
VCEO | 45 60 80 100 |
V |
Emitter-base voltage | VEBO | 5 | V | |
Continuous collector current | IC | 10 | A | |
Peak collector current (see Note 1) | ICM | 15 | A | |
Continuous base current | IB | 3 | A | |
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) | Ptot | 80 | W | |
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) | Ptot | 3 | W | |
Unclamped inductive load energy (see Note 4) | 1/2LIC2 | 62.5 | mJ | |
Operating junction temperature range | Tj | -65 to +150 | °C | |
Storage temperature range | Tstg | -65 to +150 | °C | |
Lead temperature 3.2 mm from case for 10 seconds | TL | 250 | °C |