Transistors Bipolar (BJT) PNP Epitaxial Sil
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 100 V |
Emitter- Base Voltage VEBO : | - 5 V | Maximum DC Collector Current : | 6 A |
DC Collector/Base Gain hfe Min : | 30 | Configuration : | Single |
Maximum Operating Frequency : | 3 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-220 |
Packaging : | Bulk |
Symbol | Parameter |
Value |
Units | |
VCBO | Collector-Base Voltage | :BD244 |
-45 |
V |
:BD244A | -60 | |||
:BD244B |
-80 |
V | ||
:BD244C |
-100 |
V | ||
VCEO | Collector-Emitter Voltage | :BD244 |
-45 |
V |
:BD244A | -60 | |||
:BD244B |
-80 |
V | ||
:BD244C |
-100 |
V | ||
VEBO | Emitter-Base Voltage |
-5 |
V | |
IC | Collector Current (DC) |
-6 |
A | |
ICP | *Collector Current (Pulse) |
-10 |
A | |
IB | Base Current |
-2 |
A | |
PC | Collector Dissipation (TC =25) |
65 |
W | |
TJ | Junction Temperature |
150 |
||
TSTG | Storage Temperature |
- 65 ~ 150 |
Technical/Catalog Information | BD244C |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Current - Collector (Ic) (Max) | 6A |
Power - Max | 65W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 3A, 4V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1A, 6A |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | 400A |
Mounting Type | Through Hole |
Package / Case | TO-220-3 (Straight Leads) |
Packaging | Tube |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BD244C BD244C 497 7168 5 ND 49771685ND 497-7168-5 |