BD244B

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 80 V
Maximum DC Collector Current : 6 A
Maximum Operating Frequency : 3 MHz
DC Collector/Base Gain hfe Min : 30
Packaging : Bulk
Package / Case : TO-220


Application

* Complement to BD243, BD243A, BD243B and BD243C respectively




Specifications

Symbol	Parameter		Value	Units
VCBO	Collector-Base Voltage	:BD244	-45	V
		:BD244A	-60
		:BD244B	-80	V
		:BD244C	-100	V
VCEO	Collector-Emitter Voltage	:BD244	-45	V
		:BD244A	-60
		:BD244B	-80	V
		:BD244C	-100	V
VEBO	Emitter-Base Voltage		-5	V
IC	Collector Current (DC)		-6	A
ICP	*Collector Current (Pulse)		-10	A
IB	Base Current		-2	A
PC	Collector Dissipation (TC =25)		65	W
TJ	Junction Temperature		150
TSTG	Storage Temperature		- 65 ~ 150

Parameters:

Technical/Catalog Information	BD244B
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	6A
Power - Max	65W
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 300mA, 4V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 1A, 6A
Frequency - Transition	3MHz
Current - Collector Cutoff (Max)	400A
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Bulk
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BD244B BD244B BD244BOS ND BD244BOSND BD244BOS