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BD243TU

Transistors Bipolar (BJT) NPN Si Transistor Epitaxial

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SeekIC No. : 00211575 Detail

BD243TU: Transistors Bipolar (BJT) NPN Si Transistor Epitaxial

BD243TU Data Sheet

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Part Number:
BD243TU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 45 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 6 A
DC Collector/Base Gain hfe Min : 30 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Collector- Emitter Voltage VCEO Max : 45 V
Maximum DC Collector Current : 6 A
DC Collector/Base Gain hfe Min : 30
Package / Case : TO-220


Parameters:

Technical/Catalog InformationBD243TU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)45V
Current - Collector (Ic) (Max)6A
Power - Max65W
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 300mA, 4V
Vce Saturation (Max) @ Ib, Ic1.5V @ 1A, 6A
Frequency - Transition-
Current - Collector Cutoff (Max)700A
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BD243TU
BD243TU



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