Transistors Bipolar (BJT) 65W NPN Silicon
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 45 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 6 A |
DC Collector/Base Gain hfe Min : | 30 | Configuration : | Single |
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole |
Package / Case : | TO-220 |
Symbol | Parameter |
Value |
Units | |
VCBO | Collector-Base Voltage | :BD243 |
45 |
V |
:BD243A | 60 | |||
:BD243B |
80 |
V | ||
:BD243C |
100 |
V | ||
VCEO | Collector-Emitter Voltage | :BD243 |
45 |
V |
:BD243A | 60 | |||
:BD243B |
80 |
V | ||
:BD243C |
100 |
V | ||
VEBO | Emitter-Base Voltage |
5 |
V | |
IC | Collector Current (DC) |
6 |
A | |
ICP | *Collector Current (Pulse) |
10 |
A | |
IB | Base Current |
2 |
A | |
PC | Collector Dissipation (TC =25) |
65 |
W | |
TJ | Junction Temperature |
150 |
||
TSTG | Storage Temperature |
- 65 ~ 150 |