BD242B

Maximum Operating Frequency :
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
Maximum DC Collector Current : 3 A
Collector- Emitter Voltage VCEO Max : 80 V
Packaging : Bulk
Package / Case : TO-220
DC Collector/Base Gain hfe Min : 10


Application

·For medium power linear and switching applications




Specifications

SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
VCBO VCEO VEBO IC ICM IB PC Tj Tstg	Collector-base voltage BD242 BD242A BD242B BD242C Collector-emitter voltage BD242 BD242A BD242B BD242C Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature	Open emitter Open base Open collector TC=25	-55 -70 -90 -115 -45 -60 -80 -100 -5 -3 -5 -1 40 150 -65~150	V V V V V V V V V A A A W

Description

The BD242B features are as follows:

·With TO-220C package
·Complement to type BD241/A/B/C

Parameters:

Technical/Catalog Information	BD242B
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	3A
Power - Max	40W
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 1A, 4V
Vce Saturation (Max) @ Ib, Ic	1.2V @ 600mA, 3A
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BD242B BD242B BD242BST ND BD242BSTND BD242BST