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BD241TU

Transistors Bipolar (BJT) NPN Si Transistor Epitaxial

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SeekIC No. : 00211169 Detail

BD241TU: Transistors Bipolar (BJT) NPN Si Transistor Epitaxial

BD241TU Data Sheet

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Part Number:
BD241TU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 45 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 3 A
DC Collector/Base Gain hfe Min : 10 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Maximum DC Collector Current : 3 A
Collector- Emitter Voltage VCEO Max : 45 V
Package / Case : TO-220
DC Collector/Base Gain hfe Min : 10


Parameters:

Technical/Catalog InformationBD241TU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)45V
Current - Collector (Ic) (Max)3A
Power - Max40W
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 1A, 4V
Vce Saturation (Max) @ Ib, Ic1.2V @ 600mA, 3A
Frequency - Transition-
Current - Collector Cutoff (Max)300A
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BD241TU
BD241TU



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