BD241C

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
DC Collector/Base Gain hfe Min : 25
Packaging : Tube
Maximum DC Collector Current : 3 A
Package / Case : TO-220


Application

* Complement to BD242/A/B/C respectively




Specifications

Symbol	Parameter		Value	Units
VCBO	Collector-Base Voltage	:BD241	45	V
		:BD241A	60
		:BD241B	80	V
		:BD241C	100	V
VCEO	Collector-Emitter Voltage	:BD241	55	V
		:BD241A	70
		:BD241B	90	V
		:BD241C	115	V
VEBO	Emitter-Base Voltage		5	V
IC	Collector Current (DC)		3	A
ICP	*Collector Current (Pulse)		5	A
IB	Base Current		1	A
PC	Collector Dissipation (TC =25)		40	W
TJ	Junction Temperature		150
TSTG	Storage Temperature		- 65 ~ 150

Parameters:

Technical/Catalog Information	BD241C
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	3A
Power - Max	40W
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 1A, 4V
Vce Saturation (Max) @ Ib, Ic	1.2V @ 600mA, 3A
Frequency - Transition	3MHz
Current - Collector Cutoff (Max)	200A
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BD241C BD241C