Application*GENERALPURPOSESWITCHING*GENERALPURPOSEAMPLIFIERSSpecifications Symbol Parameter Value Unit NPN BD241BFP PNP BD242BFP VCER Collector-Base Voltage (RBE =100 ) 90 V VCEO Collector-Emitter Voltage (IB =0) 80 V VEBO Emitter-Base Voltage (IC =0) 5 V IC C...
BD241BFP: Application*GENERALPURPOSESWITCHING*GENERALPURPOSEAMPLIFIERSSpecifications Symbol Parameter Value Unit NPN BD241BFP PNP BD242BFP VCER Collector-Base Voltage (RBE =100 ) 90 V ...
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Symbol | Parameter | Value | Unit | |
NPN | BD241BFP | |||
PNP | BD242BFP | |||
VCER | Collector-Base Voltage (RBE =100 ) | 90 | V | |
VCEO | Collector-Emitter Voltage (IB =0) | 80 | V | |
VEBO | Emitter-Base Voltage (IC =0) | 5 | V | |
IC | Collector Current | 3 | A | |
I C IB |
Collector Peak Current Base Current |
5 1 |
A A | |
Ptot | Total Dissipation at Tc 25 | 24 | W | |
Tstg | Storage Temperature | -65 to 150 | ||
Tj | Max. Operating Junction Temperature | 150 |
The BD241BFP features are as follows:
*The BD241BFP is silicon epitaxial-base NPN transistors mounted in TO-220FP fully molded isolated package.
*It is inteded for power linear and switching applications.
*The complementaryPNPtypesis theBD242BFP.