BD241B

Transistors Bipolar (BJT) NPN General Purpose

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BD241B Picture
SeekIC No. : 00213723 Detail

BD241B: Transistors Bipolar (BJT) NPN General Purpose

floor Price/Ceiling Price

Part Number:
BD241B
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 80 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 3 A
DC Collector/Base Gain hfe Min : 10 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-220AB
Packaging : Tube
Maximum DC Collector Current : 3 A
Collector- Emitter Voltage VCEO Max : 80 V
DC Collector/Base Gain hfe Min : 10


Application

* Complement to BD242/A/B/C respectively




Specifications

Symbol Parameter
Value
Units
VCBO Collector-Base Voltage :BD241
45
V
:BD241A 60
:BD241B
80
V
:BD241C
100
V
VCEO Collector-Emitter Voltage :BD241
55
V
:BD241A 70
:BD241B
90
V
:BD241C
115
V
VEBO Emitter-Base Voltage
5
V
IC Collector Current (DC)
3
A
ICP *Collector Current (Pulse)
5
A
IB Base Current
1
A
PC Collector Dissipation (TC =25)
40
W
TJ Junction Temperature
150
TSTG Storage Temperature
- 65 ~ 150





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