Transistors Bipolar (BJT) 30W PNP Silicon
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 100 V | ||
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 2 A | ||
DC Collector/Base Gain hfe Min : | 40 | Maximum Operating Temperature : | + 150 C | ||
Mounting Style : | Through Hole | Package / Case : | TO-220 |
Symbol | Parameter |
Value |
Units | |
VCBO | Collector-Base Voltage | :BD240 |
-45 |
V |
:BD240A | -60 | |||
:BD240B |
-80 |
V | ||
:BD240C |
-100 |
V | ||
VCEO | Collector-Emitter Voltage | :BD240 |
-55 |
V |
:BD240A | -70 | |||
:BD240B |
-90 |
V | ||
:BD240C |
-115 |
V | ||
VEBO | Emitter-Base Voltage |
-5 |
V | |
IC | Collector Current (DC) |
-2 |
A | |
ICP | *Collector Current (Pulse) |
-4 |
A | |
IB | Base Current |
-0.6 |
A | |
PC | Collector Dissipation (TC =25) |
30 |
W | |
TJ | Junction Temperature |
150 |
||
TSTG | Storage Temperature |
- 65 ~ 150 |