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BD239E

Transistors Bipolar (BJT) 30W NPN Silicon

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SeekIC No. : 00214395 Detail

BD239E: Transistors Bipolar (BJT) 30W NPN Silicon

BD239E Data Sheet

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Part Number:
BD239E
Mfg:
Bourns
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 140 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 2 A
Configuration : Single Maximum Operating Temperature : + 150 C
Package / Case : TO-220    

Description

DC Collector/Base Gain hfe Min :
Maximum Operating Frequency :
Mounting Style :
Packaging :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-220
Maximum DC Collector Current : 2 A
Collector- Emitter Voltage VCEO Max : 140 V


Specifications

RATING SYMBOL VALUE UNIT
Collector-emitter voltage (RBE = 100 W)
 BD239D
BD239E
BD239F		 VCER 160
180
200		 V
Collector-emitter voltage (IB = 0)
 BD239D
BD239E
BD239F		 VCEO 120
140
160		 V
Emitter-base voltage VEBO 5 V
Continuous collector current IC 2 A
Peak collector current (see Note 1) ICM 4 A
Continuous base current IB 0.6 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 30 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2 W
Unclamped inductive load energy (see Note 4) 1/2LIC2 32 mJ
Operating junction temperature range Tj -65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds TL 250 °C



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