BD239C

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
DC Collector/Base Gain hfe Min : 15
Packaging : Bulk
Package / Case : TO-220
Maximum DC Collector Current : 2 A


Application

* Complement to BD240/A/B/C respectively




Specifications

Symbol	Parameter		Value	Units
VCBO	Collector-Base Voltage	:BD239	45	V
		:BD239A	60
		:BD239B	80	V
		:BD239C	100	V
VCEO	Collector-Emitter Voltage	:BD239	55	V
		:BD239A	70
		:BD239B	90	V
		:BD239C	115	V
VEBO	Emitter-Base Voltage		5	V
IC	Collector Current (DC)		2	A
ICP	*Collector Current (Pulse)		4	A
IB	Base Current		0.6	A
PC	Collector Dissipation (TC =25)		30	W
TJ	Junction Temperature		150
TSTG	Storage Temperature		- 65 ~ 150

Parameters:

Technical/Catalog Information	BD239C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	2A
Power - Max	30W
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 200mA, 4V
Vce Saturation (Max) @ Ib, Ic	700mV @ 200mA, 1A
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BD239C BD239C