BD239

Transistors Bipolar (BJT) 30W NPN Silicon

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BD239 Picture
SeekIC No. : 00214125 Detail

BD239: Transistors Bipolar (BJT) 30W NPN Silicon

floor Price/Ceiling Price

Part Number:
BD239
Mfg:
Bourns
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 45 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 2 A
DC Collector/Base Gain hfe Min : 40 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220    

Description

Maximum Operating Frequency :
Packaging :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Collector- Emitter Voltage VCEO Max : 45 V
DC Collector/Base Gain hfe Min : 40
Package / Case : TO-220
Maximum DC Collector Current : 2 A


Application

* Complement to BD240/A/B/C respectively




Specifications

Symbol Parameter
Value
Units
VCBO Collector-Base Voltage :BD239
45
V
:BD239A 60
:BD239B
80
V
:BD239C
100
V
VCEO Collector-Emitter Voltage :BD239
55
V
:BD239A 70
:BD239B
90
V
:BD239C
115
V
VEBO Emitter-Base Voltage
5
V
IC Collector Current (DC)
2
A
ICP *Collector Current (Pulse)
4
A
IB Base Current
0.6
A
PC Collector Dissipation (TC =25)
30
W
TJ Junction Temperature
150
TSTG Storage Temperature
- 65 ~ 150





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