BD238

Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Collector- Emitter Voltage VCEO Max : 80 V
Maximum Operating Frequency : 3 MHz
DC Collector/Base Gain hfe Min : 40
Maximum DC Collector Current : 2 A
Package / Case : SOT-32


Application

* Complement to BD 233/235/237 respectively




Specifications

Symbol	Parameter		Value	Units
VCBO	Collector-Base Voltage	: BD234	-45	V
		: BD236	-60	V
		: BD238	-100	V
VCEO	Collector-Emitter Voltage	: BD234	-45	V
		: BD236	-60	V
		: BD238	-80	V
VCER	V Collector-Emitter Voltage	: BD234	-45	V
		: BD236	-60	V
		: BD238	-100	V
VEBO	Emitter-Base Voltage		-5	V
IC	Collector Current (DC)		-2	A
ICP	*Collector Current (Pulse)		-6	A
PC	Collector Dissipation (TC =25)		25	W
TJ	Junction Temperature		150
TSTG	Storage Temperature		- 65 ~ 150

Parameters:

Technical/Catalog Information	BD238
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	2A
Power - Max	25W
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 150mA, 2V
Vce Saturation (Max) @ Ib, Ic	600mV @ 100mA, 1A
Frequency - Transition	3MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	SOT-32-3, TO-126-3
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BD238 BD238