BD233STU

Transistors Bipolar (BJT) NPN Epitaxial Sil

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SeekIC No. : 00211663 Detail

BD233STU: Transistors Bipolar (BJT) NPN Epitaxial Sil

floor Price/Ceiling Price

Part Number:
BD233STU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 45 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 2 A
DC Collector/Base Gain hfe Min : 40 Configuration : Single
Maximum Operating Frequency : 3 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-126
Packaging : Tube    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Collector- Emitter Voltage VCEO Max : 45 V
Maximum Operating Frequency : 3 MHz
DC Collector/Base Gain hfe Min : 40
Maximum DC Collector Current : 2 A
Package / Case : TO-126


Parameters:

Technical/Catalog InformationBD233STU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)45V
Current - Collector (Ic) (Max)2A
Power - Max25W
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 2V
Vce Saturation (Max) @ Ib, Ic600mV @ 100mA, 1A
Frequency - Transition3MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-126
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BD233STU
BD233STU



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