Transistors Bipolar (BJT) NPN Epitaxial Sil
BD159STU: Transistors Bipolar (BJT) NPN Epitaxial Sil
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 350 V | ||
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 0.5 A | ||
DC Collector/Base Gain hfe Min : | 30 | Configuration : | Single | ||
Maximum Operating Temperature : | + 50 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-126 | Packaging : | Tube |
Technical/Catalog Information | BD159STU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 350V |
Current - Collector (Ic) (Max) | 500mA |
Power - Max | 20W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V |
Vce Saturation (Max) @ Ib, Ic | - |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-126 |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BD159STU BD159STU |