BD159

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 0.5 A
DC Collector/Base Gain hfe Min : 30
Packaging : Bulk
Collector- Emitter Voltage VCEO Max : 350 V
Package / Case : TO-225


Specifications

Symbol	Parameter		Value	Units
VCBO	Collector-Base Voltage	: BD157	275	V
		: BD158	325	V
		: BD159	375	V
VCEO	Collector-Emitter Voltage	: BD157	250	V
		: BD158	300	V
		: BD159	350	V
VEBO	Emitter-Base Voltage		5	V
IC	Collector Current (DC)		0.5	A
ICP	*Collector Current (Pulse)		1.0	A
IB	Base Current		0.25	A
PC	Collector Dissipation (TC =25)		20	W
TJ	Junction Temperature		50
TSTG	Storage Temperature		- 65 ~ 150

Parameters:

Technical/Catalog Information	BD159
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	350V
Current - Collector (Ic) (Max)	500mA
Power - Max	20W
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 50mA, 10V
Vce Saturation (Max) @ Ib, Ic	-
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-225-3
Packaging	Bulk
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BD159 BD159