Transistors Bipolar (BJT) PNP Silicon Trnsistr
BD140-10: Transistors Bipolar (BJT) PNP Silicon Trnsistr
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 80 V | ||
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 1.5 A | ||
DC Collector/Base Gain hfe Min : | 63 at 150 mA at 2 V | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-32 | Packaging : | Tube |
Rating | Symbol | Type |
Value |
Units |
CollectorEmitter Voltage | VCEO | BD136 |
45 |
Vdc |
BD138 |
60 |
Vdc | ||
BD140 |
80 |
Vdc | ||
CollectorBase Voltage | VCBO | BD136 |
45 |
Vdc |
BD138 |
60 |
Vdc | ||
BD140 |
100 |
Vdc | ||
Emitter-Base Voltage | VEBO |
5 |
Vdc | |
Collector Current | IC |
1.5 |
Adc | |
Base Current | IB |
0.5 |
Adc | |
Total Device Dissipation@ T = 25 ADerate above 25 |
PC |
1.25 10 |
Watt mW/ | |
Total Device Dissipation @ T = 25 CDerate above 25 |
PC |
12.5 100 |
Watt mW/ | |
Operating and Storage Junction Temperarture Range |
TJ:TSTG |
55 to +150 |