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BC 640

Features: ·l High current gain· High collector current· Low collector-emitter saturation voltage· Complementary types: BC 635, BC 637, BC 639 (NPN)Specifications Parameter Symbol Values Unit BC 635 BC 637 BC 639 Collector-emitter voltage VCE0 45 60 80 V...

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BC 640: Features: ·l High current gain· High collector current· Low collector-emitter saturation voltage· Complementary types: BC 635, BC 637, BC 639 (NPN)Specifications Parameter Symbol Values...

BC 640 Data Sheet

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Part Number:
BC 640
Supply Ability:
5000

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Product Details

Description



Features:

·l High current gain
· High collector current
· Low collector-emitter saturation voltage
· Complementary types: BC 635, BC 637, BC 639 (NPN)


Specifications

Parameter
Symbol
Values
Unit
BC 635
BC 637
 BC 639
Collector-emitter voltage
VCE0
45
60
 80
V
Collector-base voltage
VCB0
45
60
 100
V
Emitter-base voltage
VEB0
5
5
 5
V
Collector current
IC
1
mA
Peak collector current
ICM
1.5
A
Base current
IB
100
mA
Peak emitter current
IEM
200
mA
Total power dissipation, TS = 90 °C1)
Ptot
0.8 (1)
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
65 . + 150
°C
Junction - ambient1)
Rth JA
156
K/W
Junction - case2)
Rth JC
55
K/W
1) If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm x 10 mm large copper area for the collector terminal, Rth JA = 125 K/W and thus Ptot max = 1 W at TA = 25 °C.
2) Mounted on Al heat sink 15 mm ´ 25 mm ´ 0.5 mm.


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