BCY79VIII

Transistor Polarity :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Maximum DC Collector Current :
DC Collector/Base Gain hfe Min :
Configuration :
Maximum Operating Frequency :
Maximum Operating Temperature :
Mounting Style : Through Hole
Packaging : Bulk
Package / Case : TO-18


Specifications

                                                      SYMBOL               BCY78           BCY79             UNITS
Collector-Base Voltage                   V_CBO                      32                 45                   V   
Collector-Emitter Voltage               V_CEO                       32                 45                   V 
Emitter-Base Voltage                     V_EBO                                 5.0                             V  
Collector Current                           I_C                                     100                             mA     
Collector Current (Peak)                I_CM                                   200                             mA     
Base Current (Peak)                      I_BM                                   200                             mA     
Power Dissipation                          P_D                                    340                             mW 
Power Dissipation(T_C =25)          P _D                                   1.0                              W 
Operating and Storage  
Junction Temperature                     T_J ,T_stg                       -65 to +200                       
Thermal Resistance                        _JA                                   450                            /W
Thermal Resistance                        _JC                                   150                            /W

Description

The CENTRAL SEMICONDUCTOR BCY78, BCY79 Series types are Silicon PNP Epitaxial Planar Transistors, the BCY79VIII is mounted in a hermetically sealed metal case, designed for low noise amplifier and switching applications.