Features: · For general AF applications· High current gain· Low collector-emitter saturation voltage· Complementary types: BCW 65, BCW 66 (NPN)Specifications Parameter Symbol Values Unit BCW 67 BCW 68 Collector-emitter voltage VCE0 32 45 V Collector-...
BCW 68: Features: · For general AF applications· High current gain· Low collector-emitter saturation voltage· Complementary types: BCW 65, BCW 66 (NPN)Specifications Parameter Symbol Values ...
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Transistors Switching (Resistor Biased) NPN Silicon AF Transistors
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Transistors Switching (Resistor Biased) NPN Silicon AF TRANSISTOR
Parameter |
Symbol |
Values
|
Unit | |
BCW 67 |
BCW 68 |
|||
Collector-emitter voltage |
VCE0 |
32 |
45 |
V |
Collector-base voltage |
VCB0 |
45 |
60 |
V |
Emitter-base voltage |
VEB0 |
5 |
5 |
V |
Collector current |
IC |
800 |
mA | |
Peak collector current |
ICM |
1 |
A | |
Base current |
IB |
100 |
mA | |
Peak base current |
IBM |
200 |
mA | |
Total power dissipation, TS = 79 °C |
Ptot |
330 |
mW | |
Junction temperature |
Tj |
150 |
°C | |
Storage temperature range |
Tstg |
65 . + 150 |
°C | |
Junction - ambient1) |
Rth JA |
285 |
K/W | |
Junction - soldering point |
Rth JS |
215 |
K/W |