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BCW81

Features: * Low current (max. 100 mA).* Low voltage (max. 45 V).Application* General purpose switching and high gain amplification.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open ...

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BCW81: Features: * Low current (max. 100 mA).* Low voltage (max. 45 V).Application* General purpose switching and high gain amplification.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT...

BCW81 Data Sheet

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Part Number:
BCW81
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/17

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Product Details

Description



Features:

* Low current (max. 100 mA).
* Low voltage (max. 45 V).


Application

* General purpose switching and high gain amplification.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO

collector-base voltage

 open emitter - 50 V
VCEO collector-emitter voltage open base - 45 V
V
VEBO emitter-base voltage open collector - 5 V
IC collector current (DC)   - 100 mA
ICM peak collector current   - 200 mA
IBM peak base current   - 200 mA
Ptot total power dissipation Tamb 25 °C - 250 mW
Tstg storage temperature   -65 +150
Tj junction temperature   - 150
Tamb operating ambient temperature   -65 +150



Description

NPN transistor BCW81 in a SOT23 plastic package.


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