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BCW60A: Transistors Bipolar (BJT) NPN/ 32V/ 100mA

BCW60A Data Sheet

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Part Number:: BCW60A
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/21

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BCW60 evaluate
Specifications BCW60 Collector-Emitter-voltage B open VCE0 32V Collector-Base...
BCW60A_D87Z evaluate
Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
BCW60A_Q evaluate
Transistors Bipolar (BJT) NPN/ 32V/ 100mA

Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	32 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	0.1 A
DC Collector/Base Gain hfe Min :	120	Configuration :	Single
Maximum Operating Frequency :	125 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	SMD/SMT	Package / Case :	SOT-23
Packaging :	Reel

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 0.1 A
Package / Case : SOT-23
DC Collector/Base Gain hfe Min : 120
Collector- Emitter Voltage VCEO Max : 32 V
Maximum Operating Frequency : 125 MHz

Features:

NPN epitaxial silicon transistor.

Specifications

Parameter	Symbol	Rating	Unit
Collector-Emitter Voltage	V_CBO	32	V
Collector-Base Voltage	V_CEO	32	V
Emitter-Base Voltage	V_EBO	5	V
Continuous collector current	I_C	100	mA
Collector dissipation	P_C	350	mW
storage temperature	T_STG	-55 to +150

Parameters:

Technical/Catalog Information	BCW60A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	32V
Current - Collector (Ic) (Max)	100mA
Power - Max	350mW
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 2mA, 5V
Vce Saturation (Max) @ Ib, Ic	550mV @ 1.25mA, 50mA
Frequency - Transition	125MHz
Current - Collector Cutoff (Max)	20nA
Mounting Type	Surface Mount
Package / Case	SOT-23
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BCW60A BCW60A

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BCW60A

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