Transistors Bipolar (BJT) 100mA 32V NPN
BCW32LT1G: Transistors Bipolar (BJT) 100mA 32V NPN
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 32 V | ||
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 0.1 A | ||
DC Collector/Base Gain hfe Min : | 200 at 2 mA at 5 V | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-23 | Packaging : | Reel |
Technical/Catalog Information | BCW32LT1G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 32V |
Current - Collector (Ic) (Max) | 100mA |
Power - Max | 225mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 500A, 10mA |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | - |
Mounting Type | Surface Mount |
Package / Case | SOT-23-3, TO-236-3, Micro3?, SSD3, SST3 |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BCW32LT1G BCW32LT1G |