Features: * Low current (max. 100 mA)* Low voltage (max. 30 and 6 V).Application* General purpose switching and amplification.* For use in Schmitt-trigger applications.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltageTR1TR2 open emitter -- 306...
BCV63B: Features: * Low current (max. 100 mA)* Low voltage (max. 30 and 6 V).Application* General purpose switching and amplification.* For use in Schmitt-trigger applications.Specifications SYMBOL PA...
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* Low current (max. 100 mA)
* Low voltage (max. 30 and 6 V).
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCBO |
collector-base voltage |
open emitter | - - |
30 6 |
V V |
VCEO | collector-emitter voltage TR1 TR2 |
open base | - - |
30 6 |
V V |
VEBO | emitter-base voltage | open collector | - | 6 | V |
IC | collector current (DC) | - | 100 | mA | |
ICM | peak collector current | - | 200 | A | |
IB | base current (DC) | - | 100 | mA | |
Ptot | total power dissipation | Tamb 25 °C;note 1 | - | 250 | mW |
Tstg | storage temperature | -65 | +150 | ||
Tj | junction temperature | - | 150 | ||
Tamb | operating ambient temperature | -65 | +150 |
BCV63B features as follows
*NPN double transistor in a SOT143B plastic package.
*PNP complement: BCV64B.