BCP869

Features of the BCP869 are:(1)power dissipation PCM is 500 mW(Tamb=25);(2)collector current ICM is -2 A;(3)collector-base voltage V(BR)CBO is -32 V;(4)operating and storage junction temperature range TJ,TSTG is -65 to +150.

Device marking of the BCP869 is CEC.

The electrical characteristics of the BCP869 can be summarized as:(1):the parameter is collector-base breakdown voltage,the symbol is V(BR)CBO,the Min is -32,the unit is V;(2):the parameter is collector-emitter breakdown voltage,the symbol is V(BR)CEO,the Min is -20,the unit is V;(3):the parameter is emitter-base breakdown voltage,the symbol is V(BR)EBO,the Min is -5,the unit is V;(4):the parameter of BCP869 is collector cut-off current,the symbol is ICBO,the Max is -0.1,the unit is A;(5):the parameter of BCP869 is emitter cut-off current,the symbol is IEBO,the Max is -0.1,the unit is A;(6):the parameter is DC current gain,the symbol is hFE,the Min is 50,100,60,the Max is 375;(7):the parameter is collector-emitter saturation voltage,the symbol is VCE(sat),the Max is 0.5,the unit is V;(8):the parameter is transition frequency,the symbol is fT,the Min is 40,the unit is MHz.