BCP56T1

Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 5 V
Package / Case : SOT-223
Collector- Emitter Voltage VCEO Max : 80 V
Maximum Operating Frequency : 130 MHz
Maximum DC Collector Current : 1 A
Configuration : Single Dual Collector
DC Collector/Base Gain hfe Min : 25 at 5 mA at 2 V


Specifications

Rating	Symbol	Value	Unit
Collector-Emitter Voltage	VCEO	80	Vdc
Collector-Base Voltage	VCBO	100	Vdc
Emitter-Base Voltage	VEBO	5	Vdc
Collector Current	IC	1	Adc
Total Power Dissipation @ T = 25oC(1) Derate above 25°C	PD	1.5 12	Watts mW/°C
Operating and Storage Temperature Range	TJ,Tstg	-65 to 150	oC

1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.


Parameters:

Technical/Catalog Information	BCP56T1
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	1A
Power - Max	1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 150mA, 2V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA
Frequency - Transition	130MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
Packaging	Tape & Reel (TR)
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BCP56T1 BCP56T1 BCP56T1OSTR ND BCP56T1OSTRND BCP56T1OSTR