Transistors Bipolar (BJT) NPN Medium Voltage
BCP56-16: Transistors Bipolar (BJT) NPN Medium Voltage
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 80 V | ||
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 1 A | ||
DC Collector/Base Gain hfe Min : | 40 | Configuration : | Single Dual Collector | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-223 | Packaging : | Reel |
Parameter | Symbol | BCP54 | BCP55 | BCP56 | Unit |
Collector-emitter voltage | VCEO |
45 |
60 | 80 |
V |
Collector-emitter voltage RBE 1k | VCER | 45 | 60 | 100 | |
Collector-base voltage | VCBO | 45 | 60 | 100 | |
Emitter-base voltage | VEBO | 5 | 5 | 5 | |
DC collector current | IC | 1 |
A | ||
Peak collector current | ICM | 1.5 | |||
Base current | IB | 100 |
mA | ||
Peak base current | IBM | 200 | |||
Total power dissipation, TS = 124 °C | Ptot | 1.5 |
W | ||
Junction temperature | Tj | 150 |
oC | ||
Storage temperature | Tstg | -65...150 |
Technical/Catalog Information | BCP56-16 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 80V |
Current - Collector (Ic) (Max) | 1A |
Power - Max | 1.6W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | - |
Mounting Type | Surface Mount |
Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
Packaging | Tape & Reel (TR) |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BCP56 16 BCP5616 497 6962 2 ND 49769622ND 497-6962-2 |