Transistors Bipolar (BJT) PNP Medium Power
BCP53-16: Transistors Bipolar (BJT) PNP Medium Power
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 80 V |
Emitter- Base Voltage VEBO : | - 5 V | Maximum DC Collector Current : | 1 A |
DC Collector/Base Gain hfe Min : | 40 | Configuration : | Single Dual Collector |
Maximum Operating Frequency : | 50 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-223 |
Packaging : | Reel |
Parameter |
Symbol |
BCP51M |
BCP52M |
BCP53M |
Unit |
Collector-emitter voltage |
VCE0 |
45 |
60 |
80 |
V |
Collector-base voltage |
VCB0 |
45 |
60 |
100 | |
Emitter-base voltage |
VEB0 |
5 |
5 |
5 | |
DC collector current |
IC |
1 |
A | ||
Peak collector current |
ICM |
1.5 | |||
Base current |
IB |
100 |
mA | ||
Peak base current |
IBM |
200 | |||
Total power dissipation, TS =124oC1) |
Ptot |
1.7 |
w | ||
Junction temperature |
Tj |
150 |
oC | ||
Storage temperature range |
Tstg |
65 . + 150 |