BCM847BS

Features: Current gain matching Base-emitter voltage matchingApplicationCurrent mirror Differential amplifierPinoutSpecifications Symbol Parameter Conditions Min Max Unit Per transistor VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open ba...

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SeekIC No. : 004297896 Detail

BCM847BS: Features: Current gain matching Base-emitter voltage matchingApplicationCurrent mirror Differential amplifierPinoutSpecifications Symbol Parameter Conditions Min Max Unit Per transistor...

floor Price/Ceiling Price

Part Number:
BCM847BS
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/18

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Product Details

Description



Features:

Current gain matching
Base-emitter voltage matching



Application

Current mirror
Differential amplifier



Pinout

  Connection Diagram


Specifications

Symbol Parameter Conditions Min Max Unit
Per transistor
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 45 V
VEBO emitter-base voltage open collector - 6 V
IC collector current (DC) - 100 mA
ICM peak collector current single pulse;
tp 1ms
- 200 mA
Ptot total power dissipation Tamb 25 °C - 200 mW
Tstg storage temperature -65 +150 °C
Tj junction temperature - 150 °C
Tamb ambient temperature -65 +150 °C
Per device
Ptot total power dissipation Tamb 25 °C [1]- 300 mW

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.


Description

NPN matched double transistor BCM847BS in a SOT363 (SC-88) SMD plastic package. Matched version of BC847BS. The transistors are fully isolated internally.
PNP equivalent: BCM857BS.


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