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BC875,126

TRANSISTOR DARL NPN 45V 1A TO-92

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SeekIC No. : 003436344 Detail

BC875,126: TRANSISTOR DARL NPN 45V 1A TO-92

BC875,126 Data Sheet

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Part Number:
BC875,126
Mfg:
Supply Ability:
5000

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  • 1~5000
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Product Details

Quick Details

Series: - Manufacturer: NXP Semiconductors
Transistor Type: NPN - Darlington Clamping Voltage : 38 V
Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 45V
Resistor - Base (R1) (Ohms): - Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 50nA Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Power - Max: 830mW
Frequency - Transition: 200MHz Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92-3    

Description

Series: -
Manufacturer: NXP Semiconductors
Voltage - Collector Emitter Breakdown (Max): 45V
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): -
Frequency - Transition: 200MHz
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Transistor Type: NPN - Darlington
Packaging: Tape & Box (TB)
Current - Collector Cutoff (Max): 50nA
Current - Collector (Ic) (Max): 1A
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Power - Max: 830mW
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A


Parameters:

Technical/Catalog InformationBC875,126
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Transistor TypeNPN - Darlington
Voltage - Collector Emitter Breakdown (Max)45V
Current - Collector (Ic) (Max)1A
Power - Max830mW
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic1.3V @ 500A, 500mA
Frequency - Transition200MHz
Current - Collector Cutoff (Max)50nA
Mounting TypeThrough Hole
Package / CaseTO-92-3
PackagingTape & Box (TB)
Drawing Number568; SOT54; ; 5
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BC875,126
BC875,126



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